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| JMnic Product Specification Silicon PNP Power Transistors 2SB762 2SB762A DESCRIPTION With TO-220C package Complement to type 2SD857/857A Low collector saturation voltage APPLICATIONS For audio frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Tc=25ae ) SYMBOL PARAMETER 2SB762 VCBO Collector-base voltage 2SB762A 2SB762 VCEO Collector-emitter voltage 2SB762A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collectorl power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base -80 -5 -4 -8 40 150 -55~150 ae ae V A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB762 IC=-30mA; IB=0 2SB762A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2SB762 2SB762A 2SB762 2SB762A IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain IC=-4A;IB=-0.4 A IC=-3A ; VCE=-4V VCE=-60V; VBE=0 CONDITIONS 2SB762 2SB762A SYMBOL MIN -60 TYP. MAX UNIT VCEO Collector-emitter breakdown voltage V -80 -1.5 -2.0 V V ICES Collector cut-off current -400 VCE=-80V; VBE=0 VCE=-30V; IB=0 -700 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V 40 15 -7 250 |I A ICEO Collector cut-off current |I A mA Switching times ton toff Turn-on time IC=-4A ; IB1=-IB2=-0.4 A Turn-off time 1.3 |I s 0.3 |I s hFE-1 classifications R 40-90 Q 70-150 P 120-250 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB762 2SB762A Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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